| PART |
Description |
Maker |
| WSF128K16-37H1C WSF128K16-37H1M WSF128K16-XXX WSF1 |
128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
|
WEDC[White Electronic Designs Corporation]
|
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| ACTSF512K16 ACT-SF512K16N-37F18T ACT-SF512K16N-37F |
ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module
|
AEROFLEX[Aeroflex Circuit Technology]
|
| BQ4024YMA-85 BQ4024 BQ4024MA-120 BQ4024MA-85 BQ402 |
128Kx16 Nonvolatile SRAM
|
ETC[ETC]
|
| KM23C8105D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16)掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TM |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| BS616LV8018 BS616LV8018FIP70 BS616LV8018FC BS616LV |
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| BS616LV8016 BS616LV8016FIP70 BS616LV8016FC BS616LV |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, Inc.
|
| UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
| MX23C8111PC-95 MX23C8111PC-12 |
ROM|512KX16/1MX8|CMOS|DIP|42PIN|PLASTIC 光盘| 512KX16/1MX8 |的CMOS |双酯| 42PIN |塑料
|
Macronix International Co., Ltd.
|
